Hussam Amrouch has developed an AI-ready architecture that is twice as powerful as comparable in-memory computing approaches. As reported in the journal Nature Communications (“First demonstration of in-memory computing crossbar using multi-level Cell FeFET”), the professor at the Technical University of Munich (TUM) applies a new computational paradigm using special circuits known as ferroelectric field effect transistors (FeFETs). Within a few years, this could prove useful for generative AI, deep learning algorithms and robotic applications.
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