Metal halide perovskites are semiconducting materials with advantageous optoelectronic properties, low defects and low costs of production. In contrast with other emerging semiconductors, these materials can be easily synthesized via affordable solution processing methods.
In recent years, some engineers have been exploring the potential of metal halide perovskites for creating highly solar cells and light emitting diodes (LEDs). Their favorable characteristics, however, could also facilitate their use for fabricating next-generation electronic components, including transistors.
Researchers at Pohang University of Science and Technology in South Korea, the Chinse Academy of Sciences and the University of Electronic Science and Technology of China recently introduced a new strategy to develop transistors based on a metal halide perovskite, specifically tin perovskite. In their paper, published in Nature Electronics, they showed that the resulting tin perovskite-based transistors could attain performances comparable to those of existing silicon-based transistors.
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