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Oct 22, 2016

4DS Memristor achieves technical milestone of memory cells denser than 3D flash with commerciallization in the 2019 timeframe

Posted by in category: computing

4DS has demonstrated Interface Switching ReRAM cells at a 40 nanometer geometry, representing significant progress in scalability and yield.

This 40nm geometry, demonstrated by 4DS, is smaller than the latest generation of 3D Flash — the most dominant non-volatile memory technology used in billions of mobile devices, cloud servers and data centers.

In 2016, 4DS has:

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