Dr. Abhishek Motayed

The Tech News Watch article New Fabrication Technique Yields Nanoscale UV LEDs said

Researchers at the National Institute of Standards and Technology (NIST), in collaboration with scientists from the University of Maryland and Howard University, have developed a technique to create tiny, highly efficient light-emitting diodes (LEDs) from nanowires. As described in a recent paper, the fabricated LEDs emit ultraviolet light — a key wavelength range required for many light-based nanotechnologies, including data storage — and the assembly technique is well-suited for scaling to commercial production.
 
Light-based nanoscale devices, such as LEDs, could be important building blocks for a new generation of ultracompact, inexpensive technologies, including sensors and optical communications devices. Ultraviolet LEDs are particularly important for data-storage and biological sensing devices, such as detectors for airborne pathogens. Nanowires made of a particular class of semiconductors that includes aluminum nitride, gallium nitride and indium nitride are the most promising candidates for nanoscale LEDs. But, says NIST researcher Abhishek Motayed, “The current nanowire LEDs are created using tedious nanowire manipulation methods and one-by-one fabrication techniques, which makes them unsuitable for commercial realization.”

Abhishek Motayed, Ph.D. earned his Ph.D in Electrical Engineering and his Bachelor of Science in Physics. He is a researcher at the National Institute of Standards and Technology (NIST) where he specializes in the fabrication and characterization of semiconductor micro and nanodevices.
 
Abhishek has worked in the field of wide-bandgap semiconductors including materials and devices. He is interested in developing novel devices and material processing technologies, and understanding fundamental transport properties in nanostructures. In 2006, his group at National Institute of Standards and Technology won the prestigious Micro/Nano 25 award for 25 most innovative products in nanotechnology (awarded by R&D magazine).
 
He coauthored Electrical characteristics of Al_xGa_1->xN Schottky diodes prepared by a two-step surface treatment, Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN, Diameter dependent transport properties of gallium nitride nanowire field effect transistors, 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes, Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser, Large Scale Assembly of GaN Nanowires Using Electric Field Assisted Alignment Techniques for Device Applications, and Tuned performance of small-signal BJT Darlington pair.
 
Abhishek has served as a reviewer for many research journals internationally. Read his LinkedIn profile.